2SD777

SKU: 2SD777

2SD777 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Datasheet

2SD777 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	65
Vbr CEO	65
Max. PD (W)	100
Max. hFE	2.5k
Min hFE	500
Ic Max. (A)	4.0
@Ic (test) (A)	500m
Polarity	NPN
Derate Above 25°C	860m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	55 V
Maximum Collector-Emitter Voltage \|Vce\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	500
SKU	346121

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