| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
Matsushita Electronics |
| Vbr CBO |
1.5k |
| Vbr CEO |
700 |
| Max. PD (W) |
35 |
| t(f) Max. (S) |
0.7u |
| Max. hFE |
12 |
| Min hFE |
4 |
| Ic Max. (A) |
8.0 |
| @Ic (test) (A) |
4.0 |
| Icbo Max. @Vcb Max. (A) |
50u |
| Polarity |
NPN |
| Oper. Temp (°C) Max. |
135 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
35 W |
| Maximum Collector-Base Voltage |Vcb| |
1600 V |
| Maximum Collector-Emitter Voltage |Vce| |
700 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
5 A |
| Max. Operating Junction Temperature (Tj) |
180 °C |
| Forward Current Transfer Ratio (hFE), MIN |
4 |
| SKU |
115452 |