2SD797

SKU: 2SD797

2SD797 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Datasheet

2SD797 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	200
Max. hFE	200
Min hFE	60
Ic Max. (A)	30
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	1.3
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	30 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	400 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	83966

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