2SD798

SKU: 2SD798

2SD798 Transistor Silicon NPN CASE: TO220 MAKE: Toshiba

Price:

£7.19 Inc. VAT (£5.99 Ex. VAT)

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Datasheet

2SD798 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Toshiba
Vbr CEO	300
Max. PD (W)	30
t(on) Delay (S)	1.0u-
t(f) Max. (S)	5.0u-
Min hFE	1.5k
Ic Max. (A)	6.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	500u
Mat.	Silicon Logic
Polarity	NPN
t(stor) Max. (S)	8.0u-
Derate Above 25°C	240m
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-47
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	35 pF
Forward Current Transfer Ratio (hFE), MIN	3000
SKU	84609

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