2SD801

SKU: 2SD801

2SD801 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CBO	800
Vbr CEO	375
Max. PD (W)	50
t(f) Max. (S)	500n
Max. hFE	12
Min hFE	3.5
Ic Max. (A)	6.0
@Ic (test) (A)	4.0
Polarity	NPN
Derate Above 25°C	400m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	800 V
Maximum Collector-Emitter Voltage \|Vce\|	375 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	135 °C
Forward Current Transfer Ratio (hFE), MIN	3.5
SKU	542530

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