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2SD802
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2SD802

SKU: 2SD802
2SD802 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Datasheet
2SD802 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 900
Vbr CEO 400
Max. PD (W) 50
t(f) Max. (S) 500n
Max. hFE 12
Min hFE 3.5
Ic Max. (A) 6.0
@Ic (test) (A) 4.0
Polarity NPN
Derate Above 25°C 400m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 135 °C
Forward Current Transfer Ratio (hFE), MIN 3.5
SKU 346126
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