2SD803

SKU: 2SD803

2SD803 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CEO	100
Max. PD (W)	100
Min hFE	1.0k
Ic Max. (A)	8.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	800m
@VCE (test)	4.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	135 °C
Forward Current Transfer Ratio (hFE), MIN	3000
SKU	549849

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