2SD806

SKU: 2SD806

2SD806 Transistor Silicon NPN CASE: TO3A-1 MAKE: Fuji Electric

Datasheet

2SD806 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3A-1
Manufacturer	Fuji Electric
Vbr CBO	650
Vbr CEO	650
Ckts Per Dev.	1
Max. PD (W)	400
t(f) Max. (S)	4.0u
Min hFE	100
Ic Max. (A)	50
@Ic (test) (A)	50
Polarity	NPN
Tr Max. (s)	3.0u
Pinout Equivalence Number	N/A
Maximum Collector Power Dissipation (Pc)	400 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	50 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	346127

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