Weight |
0.01 kg
|
Case |
TO126 |
Type |
Transistor Silicon NPN |
Manufacturer |
NEC |
Vbr CBO |
100 |
Vbr CEO |
50 |
Max. PD (W) |
10 |
Max. hFE |
600 |
Min hFE |
135 |
Ic Max. (A) |
1.0 |
@Ic (test) (A) |
100m |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
NPN |
Derate Above 25°C |
80m |
Trans. Freq (Hz) Min. |
85M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
1 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
15 pF |
Transition Frequency (ft): |
85 MHz |
Forward Current Transfer Ratio (hFE), MIN |
250 |
SKU |
86240 |