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2SD811
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2SD811

SKU: 2SD811
2SD811 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
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Datasheet
2SD811 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 900
Vbr CEO 400
Max. PD (W) 50
Max. hFE 40
Min hFE 10
Ic Max. (A) 6.0
@Ic (test) (A) 600m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 5.0M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8
SKU 115454
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