2SD812

SKU: 2SD812

2SD812 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics

Datasheet

2SD812 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Matsushita Electronics
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	40
Max. hFE	200
Min hFE	40
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	55 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	7 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	346128

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