The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD814

2SD814

SKU: 2SD814
2SD814 Transistor Silicon NPN CASE: TO236 MAKE: Matsushita Electronics
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • More pieces shipped in 14 days
?
Datasheet
2SD814 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer Matsushita Electronics
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 200m
C(ob) (F) 2.3p
hfe 65
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SMD Transistor Code PQ_PR_PS
SKU 346129
Back