2SD826E

SKU: 2SD826E

2SD826E Transistor Silicon NPN CASE: SOT32 MAKE: Sanyo Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT32
Manufacturer	Sanyo Semiconductor
Vbr CBO	60
Vbr CEO	20
Max. PD (W)	10
t(f) Max. (S)	340n+
Max. hFE	200
Min hFE	120
Ic Max. (A)	5.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Tr Max. (s)	30n
Derate Above 25°C	71m
Trans. Freq (Hz) Min.	120M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	45 pF
Transition Frequency (ft):	120 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	571838

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