2SD835

SKU: 2SD835

2SD835 Transistor Silicon NPN CASE: SOT78 MAKE: Fuji Electric

Datasheet

2SD835 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Fuji Electric
Vbr CEO	500
Max. PD (W)	60
t(on) Delay (S)	3.0u
t(f) Max. (S)	10u
Min hFE	400
Ic Max. (A)	6.0
@Ic (test) (A)	4.0
Mat.	Silicon Logic
Polarity	NPN
t(stor) Max. (S)	15u
@VCE (test)	2.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	400
SKU	346135

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