| 2SD847 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO3P | |
| Manufacturer | Fuji Electric | |
| Vbr CBO | 40 | |
| Vbr CEO | 40 | |
| Max. PD (W) | 100 | |
| Min hFE | 40 | |
| Ic Max. (A) | 15 | |
| @Ic (test) (A) | 5 | |
| Polarity | NPN | |
| @VCE (V) | 5 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 80 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 15 A | |
| Max. Operating Junction Temperature (Tj) | 135 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| SKU | 83557 | |