| 2SD852 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | MT200 | |
| Manufacturer | NEC | |
| Vbr CBO | 150 | |
| Vbr CEO | 100 | |
| Max. PD (W) | 100 | |
| t(f) Max. (S) | 1.0u- | |
| Min hFE | 1.0k | |
| Ic Max. (A) | 15 | |
| @Ic (test) (A) | 15 | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | NPN | |
| Tr Max. (s) | 1.0u- | |
| Derate Above 25°C | .80 | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 2.0 | |
| Pinout Equivalence Number | 4-33 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Base Voltage |Vcb| | 150 V | |
| Maximum Emitter-Base Voltage |Veb| | 8 V | |
| Maximum Collector Current |Ic max| | 15 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 3000 | |
| SKU | 346140 | |