The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD855
View detailed images (12)

2SD855

SKU: 2SD855
2SD855 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SD855B
Type Transistor Silicon NPN
Case SOT78
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 30
Max. hFE 450
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 0.2
Icbo Max. @Vcb Max. (A) 300u
Polarity NPN
Tr Max. (s) 1.2u
Derate Above 25°C 240m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 549851
Back