2SD856

SKU: 2SD856

2SD856 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics

Datasheet

2SD856 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SD856B
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	35
Max. hFE	250
Min hFE	40
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	300u
Polarity	NPN
Tr Max. (s)	3.5u
Derate Above 25°C	280m
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	20252

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