2SD857B

2SD857B

SKU: 2SD857B
2SD857B Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SD857
Type Transistor Silicon NPN
Case SOT78
Manufacturer Matsushita Electronics
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 40
Max. hFE 250
Min hFE 40
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 700u
Polarity NPN
Tr Max. (s) 1.6
Derate Above 25°C 320m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 550839
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