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2SD858B
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2SD858B

SKU: 2SD858B
2SD858B Transistor Silicon NPN CASE: TO218 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Generic
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 60
Max. hFE 250
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 700u
Polarity NPN
Tr Max. (s) 1.6
Derate Above 25°C 480m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 760047
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