The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD859
View detailed images (12)

2SD859

SKU: 2SD859
2SD859 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • More pieces shipped in 14 days
?
Datasheet
2SD859 Datasheet
Product specifications
Equivalent 2SD859B
Type Transistor Silicon NPN
Case SOT78
Manufacturer Matsushita Electronics
Vbr CBO 350
Vbr CEO 250
Max. PD (W) 35
Max. hFE 250
Min hFE 40
Ic Max. (A) 700m
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 2.2u
Derate Above 25°C 280m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.75 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 395694
Back