| 2SD862 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO126 | |
| Manufacturer | Matsushita Electronics | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 10 W | |
| Maximum Collector-Base Voltage |Vcb| | 20 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 300 | |
| SKU | 760039 | |