2SD866

SKU: 2SD866

2SD866 Transistor Silicon NPN CASE: TO220 MAKE: Matsushita Electronics

Datasheet

2SD866 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Matsushita Electronics
Vbr CBO	130
Vbr CEO	80
Max. PD (W)	40
t(f) Max. (S)	0.1u
Max. hFE	260
Min hFE	60
Ic Max. (A)	7.0
@Ic (test) (A)	3.5
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	320m
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	116129

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