2SD867

SKU: 2SD867

2SD867 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Datasheet

2SD867 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	130
Vbr CEO	110
Max. PD (W)	100
Max. hFE	200
Min hFE	50
Ic Max. (A)	10
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	666m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector-Emitter Voltage \|Vce\|	110 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	200 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	115457

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