The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD869
View detailed images (13)

2SD869

SKU: 2SD869
2SD869 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 8 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2SD869 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 1.5k
Vbr CEO 600
Max. PD (W) 50
Max. hFE 12-
Min hFE 8
Ic Max. (A) 3.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 95 pF
Forward Current Transfer Ratio (hFE), MIN 8
SKU 81360
Back