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2SD875
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2SD875

SKU: 2SD875
2SD875 Transistor Silicon NPN CASE: SP0 MAKE: Matsushita Electronics
Datasheet
2SD875 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SP0
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 1.0
Max. hFE 330
Ic Max. (A) 1.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 0.1u
Polarity NPN
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 346146
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