2SD877

SKU: 2SD877

2SD877 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	110
Vbr CEO	80
Max. PD (W)	25
Max. hFE	300
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	166m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	110 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	85 pF
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	82883

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