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2SD878
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2SD878

SKU: 2SD878
2SD878 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Datasheet
2SD878 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 115
Max. hFE 70
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 766m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 115 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 346147
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