2SD887
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2SD887

SKU: 2SD887
2SD887 Transistor Silicon NPN CASE: TO220 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Matsushita Electronics
Polarity NPN
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 115460
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