2SD888

SKU: 2SD888

2SD888 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics

Datasheet

2SD888 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Matsushita Electronics
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	50
Max. hFE	2.0k
Min hFE	500
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	2.1u
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	30M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	1000
SKU	346148

Back