2SD890

SKU: 2SD890

2SD890 Transistor Silicon NPN CASE: TO92 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Matsushita Electronics
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	250m
C(ob) (F)	3.0p
Derate (Amb) (W/°C)	2.5m
hfe	650=
Ic Max. (A)	20m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	135
@Ic (A)	2.0m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	0.02 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	75 MHz
Forward Current Transfer Ratio (hFE), MIN	300
SKU	549854

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