| Equivalent | 2SD898B | |
| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Hitachi | |
| Vbr CEO | 1.5k | |
| Max. PD (W) | 50 | |
| t(f) Max. (S) | 800n | |
| Min hFE | 9.5- | |
| Ic Max. (A) | 3.0 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 500u | |
| Polarity | NPN | |
| Tr Max. (s) | 1.0u | |
| Derate Above 25°C | 400m | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 50 W | |
| Maximum Collector-Base Voltage |Vcb| | 1500 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 3 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 9.5 | |
| SKU | 81367 | |