2SD899

SKU: 2SD899

2SD899 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Equivalent	2SD899A
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CEO	1.5k
Max. PD (W)	50
t(f) Max. (S)	1.0u
Min hFE	11-
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Derate Above 25°C	400m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	11
SKU	542533

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