2SD900B

SKU: 2SD900B

2SD900B Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Price:

£16.79 Inc. VAT (£13.99 Ex. VAT)

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Datasheet

2SD900B Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SD900
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CEO	1.5k
Max. PD (W)	50
t(f) Max. (S)	1.2u
Min hFE	13-
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Tr Max. (s)	1.5u
Derate Above 25°C	400m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	6
SKU	20662

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