The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD914
View detailed images (13)

2SD914

SKU: 2SD914
2SD914 Transistor Silicon NPN CASE: TO3 MAKE: Fuji Electric
Datasheet
2SD914 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Fuji Electric
Vbr CBO 200
Vbr CEO 120
Max. PD (W) 150
t(f) Max. (S) 200n
Min hFE 20
Ic Max. (A) 25
@Ic (test) (A) 25
Polarity NPN
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 346156
Back