2SD919

2SD919

SKU: 2SD919
2SD919 Transistor Silicon NPN CASE: TO92 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 400m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 4.0m
hfe 160
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 0.1u
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 150m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 760003
Back