2SD950

SKU: 2SD950

2SD950 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Datasheet

2SD950 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	1.5k
Max. PD (W)	42
Max. hFE	8.0
Min hFE	2.0
Ic Max. (A)	3.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
Tr Max. (s)	11u
Derate Above 25°C	336m
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	42 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	4
SKU	116095

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