2SD960

SKU: 2SD960

2SD960 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics

Datasheet

2SD960 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Matsushita Electronics
Vbr CBO	130
Vbr CEO	80
Max. PD (W)	35
t(f) Max. (S)	0.1u
Max. hFE	260
Min hFE	60
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	280m
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	346166

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