Weight |
0.01 kg
|
Case |
SOT32 |
Type |
Transistor Silicon NPN |
Manufacturer |
Matsushita Electronics |
Vbr CBO |
25 |
Vbr CEO |
20 |
Max. PD (W) |
600m |
C(ob) (F) |
6.0p |
Derate (Amb) (W/°C) |
5.2m |
hfe |
350= |
Ic Max. (A) |
0.5 |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
150M |
@VCE (test) (V) |
2.0 |
Oper. Temp (°C) Max. |
135 |
@Ic (A) |
500m |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.6 W |
Maximum Collector-Base Voltage |Vcb| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
0.5 A |
Max. Operating Junction Temperature (Tj) |
135 °C |
Collector Capacitance (Cc) |
6 pF |
Transition Frequency (ft): |
70 MHz |
Forward Current Transfer Ratio (hFE), MIN |
65 |
SKU |
115461 |