2SJ200
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2SJ200

SKU: 2SJ200
2SJ200 is a P-channel power MOSFET rated for -180 V drain-source voltage and -10 A drain current, with a maximum RDS(on) of 830 mΩ at |VGS| = 10 V. Supplied in a TO-3P(N) three-pin through-hole package, it suits power switching designs requiring a high-voltage P-channel device.
Price:
£19.19 Inc. VAT (£15.99 Ex. VAT)
£19.19 Inc. VAT (£15.99 Ex. VAT)
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Datasheet
2SJ200 Datasheet
Product specifications
Type Transistor P Channel MOSFET
Case TO3P
Manufacturer Toshiba
Vbr DSS 180
Vbr GSS 20
Max. PD (W) 120#
Ciss Max. (F) 1.3n-
gfs Max. 4.0-
Id Max. (A) 10
I(d) for G(fs) 3.0
Pinout Equivalence Number 3-33
Surface Mounted Yes/No NO
SKU 16785
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