2SK2611

SKU: 2SK2611

2SK2611 is a silicon N-channel enhancement-mode MOSFET rated for 900 V drain-source voltage with ±30 V gate-source tolerance. It delivers 9 A current, up to 150 W dissipation, and typical RDS(on) 1.2 Ω (maximum 1.4 Ω), supplied in Toshiba 2-16C1B / JEITA SC-65 package (TO-3PN-3 listing); suitable for DC-DC converters, relay drives, and motor drives.

Price:

£9.59 Inc. VAT (£7.99 Ex. VAT)

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Datasheet

2SK2611 Datasheet

2SK2611 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor N Channel MOSFET
Case	TO3P
Manufacturer	Toshiba
SKU	16595

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