| 2SK818 Datasheet |
| Type | Transistor N Channel MOSFET | |
| Case | TOP3 | |
| Manufacturer | Matsushita Electronics | |
| Vbr DSS | 800 | |
| Vbr GSS | 20 | |
| Max. PD (W) | 100 | |
| Ciss Max. (F) | 1.2n- | |
| Derate (Amb) (W/°C) | 800m | |
| t(f) Max. (S) | 85n- | |
| gfs Max. | 2.8- | |
| gfs Min | 1.5 | |
| Id Max. (A) | 5.0 | |
| Idss Max. (A) | 100u | |
| I(d) for G(fs) | 3.0 | |
| Tr Max. (s) | 85n- | |
| R(ds) On (Û) | 3.0= | |
| Vp Max. | 5.0 | |
| Oper. Temp (°C) Max. | 150 | |
| Pinout Equivalence Number | 3-54 | |
| Surface Mounted Yes/No | NO | |
| SKU | 313424 | |