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3DG536M
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3DG536M

SKU: 3DG536M
3DG536M Transistor Silicon NPN CASE: SOT23 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code H53D_H53E_H53F_H53G_H53H
SKU 1424594
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