| Type | Transistor Silicon NPN | |
| Case | TO66 | |
| Manufacturer | Generic | |
| Vbr CEO | 300 | |
| Max. PD (W) | 35 | |
| Max. hFE | 250 | |
| Min hFE | 40 | |
| Ic Max. (A) | 2.0 | |
| @Ic (test) (A) | 100m | |
| Icbo Max. @Vcb Max. (A) | 5.0m | |
| Polarity | NPN | |
| Derate Above 25°C | 200m | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 10 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 35 W | |
| Maximum Collector-Base Voltage |Vcb| | 300 V | |
| Maximum Emitter-Base Voltage |Veb| | 2 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| SKU | 369169 | |