| Weight |
0.05 kg
|
| Case |
TO66 |
| Type |
Transistor Silicon NPN |
| Manufacturer |
Generic |
| Vbr CEO |
60 |
| Max. PD (W) |
35 |
| Max. hFE |
175 |
| Min hFE |
35 |
| Ic Max. (A) |
7.0 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
500u |
| Polarity |
NPN |
| Derate Above 25°C |
200m |
| Trans. Freq (Hz) Min. |
15M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
35 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
7 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Transition Frequency (ft): |
8 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
35 |
| SKU |
114998 |