| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
Generic |
| Vbr CBO |
200 |
| Vbr CEO |
200 |
| Max. PD (W) |
125 |
| t(f) Max. (S) |
150n- |
| VBO Max. |
120 |
| VBO Min |
80 |
| Max. hFE |
90 |
| Min hFE |
30 |
| Ic Max. (A) |
7.0 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
250u |
| I(h) Max. (A) |
500u |
| On State Volt VTM |
2.0 |
| Polarity |
NPN |
| Tr Max. (s) |
350n- |
| Supp Curr. I(TSM) |
50 |
| Sw. Curr. Max.(A) |
500u |
| Derate Above 25°C |
714m |
| Rev. Volt (Vr) |
60 |
| Trans. Freq (Hz) Min. |
4.0M |
| Oper. Temp (°C) Min |
-45 |
| Oper. Temp (°C) Max. |
125 |
| @It (A) |
1.0 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
125 W |
| Maximum Collector-Base Voltage |Vcb| |
200 V |
| Maximum Collector-Emitter Voltage |Vce| |
200 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
7 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
4 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
10 |
| SKU |
1396588 |