;
Case | TO1 | |
Type | Transistor Germanium PNP | |
Manufacturer | Toshiba | |
Vbr CBO | 32 | |
Vbr CEO | 32 | |
Max. PD (W) | 150m | |
Derate (Amb) (W/°C) | 3.3m | |
hfe | 90 | |
Ic Max. (A) | 1.0 | |
Icbo Max. @Vcb Max. (A) | 10u | |
Polarity | PNP | |
Trans. Freq (Hz) Min. | 2.3M | |
@VCE (test) (V) | 0i | |
Oper. Temp (°C) Max. | 100 | |
@Ic (A) | 300m | |
Pinout Equivalence Number | 3-17 | |
Surface Mounted Yes/No | NO | |
Maximum Collector Power Dissipation (Pc) | 0.5 W | |
Maximum Collector-Base Voltage |Vcb| | 32 V | |
Maximum Collector-Emitter Voltage |Vce| | 12 V | |
Maximum Emitter-Base Voltage |Veb| | 10 V | |
Maximum Collector Current |Ic max| | 0.1 A | |
Max. Operating Junction Temperature (Tj) | 90 °C | |
Collector Capacitance (Cc) | 40 pF | |
Transition Frequency (ft): | 1 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 100 | |
SKU | 16844 |