| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
TO1 |
| Manufacturer |
AEI Semiconductors |
| Vbr CBO |
2.0 |
| Vbr CEO |
2.0 |
| Max. PD (W) |
60m |
| Derate (Amb) (W/°C) |
5.0m |
| Ic Max. (A) |
30m |
| Icbo Max. @Vcb Max. (A) |
7.0u |
| Polarity |
PNP |
| Oper. Temp (°C) Max. |
60 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.06 W |
| Maximum Collector-Base Voltage |Vcb| |
2 V |
| Maximum Collector-Emitter Voltage |Vce| |
2 V |
| Maximum Emitter-Base Voltage |Veb| |
2 V |
| Maximum Collector Current |Ic max| |
0.03 A |
| Max. Operating Junction Temperature (Tj) |
75 °C |
| Forward Current Transfer Ratio (hFE), MIN |
60 |
| SKU |
116660 |