| Weight |
0.01 kg
|
| Type |
Transistor Germanium NPN |
| Case |
TO1 |
| Manufacturer |
BES Manufacturing |
| Vbr CBO |
30 |
| Vbr CEO |
18 |
| Max. PD (W) |
215m |
| Derate (Amb) (W/°C) |
3.3m |
| hfe |
60 |
| Ic Max. (A) |
700m |
| Icbo Max. @Vcb Max. (A) |
35u |
| Polarity |
NPN |
| @VCE (test) (V) |
2.0 |
| Oper. Temp (°C) Max. |
100 |
| @Ic (A) |
150m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.215 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
18 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.7 A |
| Max. Operating Junction Temperature (Tj) |
90 °C |
| Collector Capacitance (Cc) |
60 pF |
| Transition Frequency (ft): |
1 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
60 |
| SKU |
84245 |