| Type | Transistor Germanium PNP | |
| Case | TO1 | |
| Manufacturer | NXP Semiconductors | |
| Vbr CBO | 25 | |
| Vbr CEO | 15 | |
| Max. PD (W) | 1.0 | |
| Max. hFE | 500 | |
| Min hFE | 100 | |
| Ic Max. (A) | 1.0 | |
| @Ic (test) (A) | 300m | |
| Icbo Max. @Vcb Max. (A) | 200u | |
| Polarity | PNP | |
| Derate Above 25°C | 25m | |
| Trans. Freq (Hz) Min. | 1.5M | |
| Oper. Temp (°C) Max. | 100 | |
| @VCE (V) | 1.0 | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.225 W | |
| Maximum Collector-Base Voltage |Vcb| | 25 V | |
| Maximum Collector-Emitter Voltage |Vce| | 15 V | |
| Maximum Emitter-Base Voltage |Veb| | 10 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 90 °C | |
| Collector Capacitance (Cc) | 110 pF | |
| Transition Frequency (ft): | 1 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 100 | |
| SKU | 16845 | |